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KSD5075T

Part Number	KSD5075T
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 11, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5075T DESCRIPTION ·High Breakdown...
Datasheet	KSD5075T PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5075T DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Electronic ballast applicaition ·High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage IC Collector Current- Continuous 6V 3.
5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 10 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5075T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.
5A; IB= 0.
8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.
5A; IB= 0.
8A ICBO Collec...

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