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KSD5076

Inchange Semiconductor
Part Number KSD5076
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 11, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5076 DESCRIPTION ·High Breakdown ...
Datasheet PDF File KSD5076 PDF File

KSD5076
KSD5076

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5076 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5076 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.
8A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V tf Fall Time IC= 4A , IB1= 0.
8A ; IB2= -1.
6A RL= 50Ω; VCC= 200V MIN TYP.
MAX UNIT 5.
0 V 1.
5 V 10 μA 1 mA 8 3 MHz 0.
4 μs isc website：www.
iscsemi.
cn 2 ...


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