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TIC126M

Inchange Semiconductor
Part Number TIC126M
Manufacturer Inchange Semiconductor
Description Thyristors
Published Aug 15, 2016
Detailed Description isc Thyristors TIC126M APPLICATIONS ·12A on-state current ·100A surge-current ·Glass passivated ·Max IGT of 20mA ·Mini...
Datasheet PDF File TIC126M PDF File

TIC126M
TIC126M

Overview
isc Thyristors TIC126M APPLICATIONS ·12A on-state current ·100A surge-current ·Glass passivated ·Max IGT of 20mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 600 600 7.
5 12 100 5 1 110 -40 ~+125 2.
4 62.
5 UNIT V V A A A W W ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM, Tj=110℃ 2.
0 mA IDRM Repetitive peak off-state current VRM=VRRM, Tj=110℃ 2.
0 mA VTM On-state voltage IT...


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