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NTE155

NTE
Part Number NTE155
Manufacturer NTE
Description Germanium Complementary Transistors
Published Aug 15, 2016
Detailed Description NTE131 (PNP) & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and...
Datasheet PDF File NTE155 PDF File

NTE155
NTE155

Overview
NTE131 (PNP) & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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32V Collector–Emitter Voltage, VCES .
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32V Emitter–Base Voltage, VEBO .
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10V Collector Current, IC .
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1A Base Current, IB .
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200mA Power Dissipation, PC .
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6W Operating Junction Temperature, TJ .
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+90°C Storage Temperature Range, Tstg .
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–55° to +90°C Note 1.
NTE131MP is a matched pair of NTE131 with their DC Current Gain (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Common–Emitter Cutoff Frequency Base–Emitter ON Voltage Collector–Emitter Saturation Voltage ICEV IEBO hFE1 hFE2 fαe VBE VCE(sat) VCE = 32V, VEB = 1V VEB = 10V, IC = 0 VCB = 0, IE = 100mA VCB = 0, IE = 1A VCB = 2V, IE = 100...


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