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NTE17

NTE
Part Number NTE17
Manufacturer NTE
Description Silicon Complementary Transistors
Published Aug 15, 2016
Detailed Description NTE16 (NPN) & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier Features: D Low Collec...
Datasheet PDF File NTE17 PDF File

NTE17
NTE17

Overview
NTE16 (NPN) & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier Features: D Low Collector Saturation Voltage D Low Output Capacitance D Low Noise Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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50V Collector–Emitter Voltage, VCEO .
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40V Emitter–Base Voltage, VEBO .
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5V Collector Current, IC .
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100mA Collector Dissipation, PC .
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300mW Operating Junction Temperature, TJ .
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+125°C Storage Temperature Range, Tstg .
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–55° to +125°C Electrical Charactristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage V(BR)CEO IC = 1mA V(BR)CBO IC = 50µA V(BR)EBO IE = 50µA Collector Cutoff Current ICBO VCB = 30V Emitter Cutoff Current DC Current Gain Collector–Emitter Saturation Voltage NTE16 IEBO hFE VCE(sat) VEB = 4V VCE = 6V, IC = 1mA IC = 50mA, IB = 5mA NTE17 Transition Frequency NTE16 fT VCE = 12V, IE = 2mA NTE17 Output Capacitance NTE16 Cob VCB = 12V, IE = 0, f = 1MHz NTE17 Min Typ Max Unit 40 – – V 50 – – V 5––V – – 0.
5 µA – – 0.
5 µA 270 – 560 – – 0.
4 V – 0.
1 0.
5 V – 180 – MHz – 140 – MHz – 2.
0 3.
5 pF – 4.
0 5.
0 pF .
102 (2.
6) .
280 (7.
11) E ...


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