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NTE19

NTE
Part Number NTE19
Manufacturer NTE
Description Silicon Complementary Transistors
Published Aug 16, 2016
Detailed Description NTE18 (NPN) & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D ...
Datasheet PDF File NTE19 PDF File

NTE19
NTE19

Overview
NTE18 (NPN) & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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80V Collector–Emitter Voltage, VCEO .
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80V Emitter–Base Voltage, VEBO .
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5V Collector Current, IC Continuous .
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700mA Pulse (Note 1) .
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1A Collector Dissipation, PC .
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1W Junction Temperature, TJ .
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+135°C Storage Temperature Range, Tstg .
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–55° to +135°C Note 1.
PW = 20ms, Duty Cycle = 1/2 Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO IC = 2mA V(BR)CBO IC = 50µA V(BR)EBO IE = 50µA ICBO VCB = 50V IEBO VEB = 4V DC Current Gain hFE VCE = 3V, IC = 100mA Collector Saturation Voltage Transition Frequency NTE18 NTE19 VCE(sat) IC = 500mA, IB = 50mA fT VCE = 10V, IC = 50mA Output Capacitance NTE18 NTE19 Cob VCB = 10V, IE = 0, f = 1MHz...


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