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NTE185

Part Number	NTE185
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	Aug 16, 2016
Detailed Description	NTE184 (NPN) & NTE185 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE184 (NPN) and...
Datasheet	NTE185 PDF File

Overview

NTE184 (NPN) & NTE185 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits.
Features: D Excellent Safe Area Limits Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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80V Collector–Base Voltage, VCB .
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80V Emitter–Base Voltage, VEB .
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5V Collector Current, IC .
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4A Base Current, IB .
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1A Total Power Dissipation (TC = +25°C), PD .
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40W Derate Above 25°C .
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320mW/°C Operating Junction Temperature Range, TJ .
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–65° to +150°C Storage Temperature Range, Tstg .
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–65° to +150°C Thermal Resistance, Junction–to–Case, RthJC .
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3.
12°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 0.
1A, IB = 0, Note 1 80 – – V Collector Cutoff Current ICEO ICEX ICBO VCE = 80V...

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