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NTE12

Part Number	NTE12
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	Aug 18, 2016
Detailed Description	NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE...
Datasheet	NTE12 PDF File

Overview

NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications.
Features: D High Collector Current: IC = 5A Max D Low Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO NTE11 .
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40V NTE12 .
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27V Collector–Emitter Voltage, VCEO NTE11 .
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20V NTE12 .
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18V Emitter–Base Voltage, VEBO .
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7V Collector Current, IC Continuous .
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5A Peak .
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8A Total Power Dissipation, PD .
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750mW Operating Junction Temperature Range, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (T...

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