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NTE91

NTE
Part Number NTE91
Manufacturer NTE
Description Silicon Complementary Transistors
Published Aug 18, 2016
Detailed Description NTE90 (NPN) & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Rating...
Datasheet PDF File NTE91 PDF File

NTE91
NTE91

Overview
NTE90 (NPN) & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO .
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120V Collector−Base Voltage, VCBO .
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120V Emitter−Base Voltage, VEBO .
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5V Collector Current, IC .
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50mA Collector Power Dissipation, PC .
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750mW Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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−55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Collector Cutoff Current DC Current Gain Base−Emitter Voltage Collector−Emitter Saturation Voltage Current Gain−Bandwidth Product Collector Output Capacitance V(BR)CEO V(BR)CBO ICBO hFE1 hFE2 VBE VCE(sat) fT Cob IC = 1mA, RBE = ∞ IC = 10µA, IE = 0 VCB = 100V, IB = 0 VCE = 12V, IC = 2mA VCE = 12V, IC = 10mA VCE = 12V, IC = 2mA IC = 10mA, IB = 1mA VCE = 12V, IC = 5mA VCB = 25V, IE = 0, f = 1MHz Min Typ Max Unit 120 − − V 120 − − V − − 0.
5 µA 400 − 800 125 − − − − 0.
75 V − − 0.
2 V − 350 − MHz − 1.
6 − pF .
339 (8.
62) Max .
512 (13.
0) Min Seating Plane .
026 (.
66) Dia Max ECB .
100 (2.
54) .
240 (6.
09) Max .
200 (5.
08) Max ...


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