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NTE50

Part Number	NTE50
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	Aug 18, 2016
Detailed Description	NTE49 (NPN) & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The N...
Datasheet	NTE50 PDF File

Overview

NTE49 (NPN) & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.
Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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100V Collector–Base Voltage, VCB .
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120V Emitter–Base Voltage, VEB .
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4V Continuous Collector Current, IC .
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2A Total Power Dissipation (TA = +25°C), PD .
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1W Derate Above 25°C .
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8mW/°C Total Power Dissipation (TC = +25°C), PD .
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10W Derate Above 25°C .
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80mW/°C Operating Junction Temperature Range, TJ .
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–55° to +150°C Storage Temperature Range, Tstg .
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–55° to +150°C Thermal Resistance, Junction–to–Case, RthJC .
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12.
5°C/W Thermal Resistance, Junction–to–Ambient, RthJA .
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