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A940

Inchange Semiconductor
Part Number A940
Manufacturer Inchange Semiconductor
Description 2SA940
Published Aug 19, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA940 DESCRIPTION ·Collector-Emitte...
Datasheet PDF File A940 PDF File

A940
A940

Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA940 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.
5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -150 V -150 V -5 V -1.
5 A -3.
0 A 25 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.
0 UNIT ℃/W isc Website：www.
iscsemi.
cn Free Datasheet http://www.
datasheet4u.
com/ INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA940 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.
5A; IB=B -50mA VBE(on) Base-Emitter On Voltage IC= -0.
5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.
5 V -0.
85 V -10 μA -10 μA hFE DC Current Gain IC= -0.
5A ; VCE= -10V 40 140 fT Current-Gain—Bandwidth Product IC= -0.
5A;VCE= -10V;ftest= 1MHz 4 MHz isc Website：www.
iscsemi.
cn 2 Free Datasheet http://www.
datasheet4u.
com/ ...


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