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TF2315

Tuofeng Semiconductor
Part Number TF2315
Manufacturer Tuofeng Semiconductor
Description MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2315 G1 S2 Description These P-Channel MOSFETs from Internationa...
Datasheet PDF File TF2315 PDF File

TF2315
TF2315

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd TF2315 G1 S2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a Power MOSFET with the industry's smallest footprint.
This package, is ideal for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best available.
Absolute Maximum Ratings VDS ID @ TA = 25°C Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.
5V IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range 3D Max.
-12 -4.
3 -34 1.
3 0.
8 0.
01 33 ± 8.
0 -55 to + 150 Units V A W W/°C mJ V °C Parameter RθJA Maximum Junction-to-Ambientƒ Typ.
75 Max.
100 Units °C/W Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd TF2315 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Min.
Typ.
Max.
Units Conditions -12 ––– ––– V VGS = 0V, ID = -250µA ––– -0.
007 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.
050 ––– ––– 0.
085 Ω VGS = -4.
5V, ID = -4.
3A ‚ V...


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