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D1047

STMicroelectronics
Part Number D1047
Manufacturer STMicroelectronics
Description NPN Transistor
Published Oct 11, 2016
Detailed Description 2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft ...
Datasheet PDF File D1047 PDF File

D1047
D1047

Overview
2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.
The resulting transistor shows good gain linearity behaviour.
3 2 1 TO-3P Figure 1.
Internal schematic diagram Table 1.
Device summary Order code 2SD1047 April 2011 Marking 2SD1047 Package TO-3P Doc ID 018729 Rev 1 Packaging Tube 1/10 www.
st.
com 10 Electrical ratings 1 Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max.
operating junction temperature Table 3.
Symbol Rthj-case Thermal data Parameter Thermal...


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