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2N5931

Part Number	2N5931
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 14, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5931 DESCRIPTION ·DC Current Gain...
Datasheet	2N5931 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5931 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 15A APPLICATIONS ·Designed for general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 170 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.
5 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.
875 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5931 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwi...

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