DatasheetsPDF.com

2N5935

Part Number	2N5935
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 14, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5935 DESCRIPTION ·DC Current Gain...
Datasheet	2N5935 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5935 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 30A ·Low Collector Saturation Voltage- : VCE(sat)= 2.
0V(Max)@ IC= 20A APPLICATIONS ·Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid /relay driver service.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.
5 A PC Collector Power Dissipation @TC=25℃ 175 W...

Similar Datasheet

2N5900 GERMANIUM PNP POWER TRANSISTORS - ETC
2N5901 GERMANIUM PNP POWER TRANSISTORS - ETC
2N5902 MONOLITHIC DUAL N-CHANNEL JFET - Intersil Corporation
2N5902 dual n-channel JFET - Siliconix
2N5903 monolithic dual n-channel JFET - Intersil Corporation
2N5903 dual n-channel JFET - Siliconix
2N5904 monolithic dual n-channel JFET - Intersil Corporation
2N5904 dual n-channel JFET - Siliconix
2N5905 monolithic dual n-channel JFET - Intersil Corporation
2N5905 N-CHANNEL JFET - Micross

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)