DatasheetsPDF.com

2SB821 Datasheet PDF


Part Number 2SB821
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistors
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in...
Features ...

File Size 141.95KB
Datasheet 2SB821 PDF File








Similar Ai Datasheet

2SB030070MLJY : Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:300µm X 300µm; Chip Thickness: 155±20µm Chip Topography and Dimensions La: Chip Size:300µm; Lb: Pad Size: 150µm; ORDERING SPECIFICATIONS Product Name 2SB030070MLJY Specification For Au and AlSi wire bonding package Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Cu.

2SB035030MLJY : Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:350µm X 350µm; Chip Thickness: 155±20µm Chip Topography and Dimensions La: Chip Size: 350µm; Lb: Pad Size: 300µm; ORDERING SPECIFICATIONS Product Name 2SB035030MLJY Specification For Au and AlSi wire bonding package Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rec.

2SB035100ML : Ø 2SB035100ML is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:350µm X 350µm; Chip Thickness: 155±20um Product Name 2SB035100MLJY Chip Topography and Dimensions La: Chip Size: 350µm; Lb: Pad Size: 300µm; ORDERING SPECIFICATIONS Specification For Au and AlSi wire bonding package Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Recti.

2SB0709A : Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) ■ Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Unit: mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 1 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Stora.

2SB0710 : Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD0602 and 2SD0602A I Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 Parameter Collector to base voltage Collector to emitter voltage 2SB0710 2SB0710A 2SB0710 2SB0710A Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating − 30 − 60 − 25 − 50 −5 −1 −500 200 150 −55 to +150 Unit V V 1: Base 2: Emitter 3: Collector 0 to 0.1 1.1+.

2SB0710A : Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD0602 and 2SD0602A I Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 Parameter Collector to base voltage Collector to emitter voltage 2SB0710 2SB0710A 2SB0710 2SB0710A Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating − 30 − 60 − 25 − 50 −5 −1 −500 200 150 −55 to +150 Unit V V 1: Base 2: Emitter 3: Collector 0 to 0.1 1.1+.

2SB0766 : Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm s Features q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 emitter voltage 2SB766A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini P.

2SB0766A : Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm s Features q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 emitter voltage 2SB766A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini P.

2SB0774 : Transistor 2SB0774 (2SB774) Silicon PNP epitaxial planer type For low-frequency amplification I Features G High emitter to base voltage VEBO. G Protective diodes and resistances between emitter and base can be omitted. 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 13.5±0.5 I Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –25 –15 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.15 1:Emitter 2:.

2SB0819 : www.DataSheet4U.com Transistors 2SB0819 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 (0.4) Unit: mm 6.9±0.1 (1.5) (1.5) 3.5±0.1 2.5±0.1 (1.0) (1.0) 2.0±0.2 2.4±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 1 150 −55 to +150 Unit V V V A A W °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C (0.85) 0.55±0.1 0.45±0.05 1: Base 2: Collect.

2SB0873 : www.DataSheet4U.com Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −30 −20 −7 −5 −10 1 150 −55 to +150 Unit V V 1 2 3 0.45+0.2 –0.1 (1.27) (1.27) 0.45+0.2 –0.1 13.5±0.5 0.

2SB0928 : Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A ■ Features • High collector-emitter voltage (Base open) VCEO • High collector power dissipation PC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. Unit : mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 10.0±0.3 1.5±0.1 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SB0928 (Base open) 2SB0928A VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO VCEO Rati.

2SB0928A : Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A ■ Features • High collector-emitter voltage (Base open) VCEO • High collector power dissipation PC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. Unit : mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 10.0±0.3 1.5±0.1 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SB0928 (Base open) 2SB0928A VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO VCEO Rati.

2SB0929 : Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A 8.5±0.2 Unit: mm 3.4±0.3 1.0±0.1 6.0±0.2 10.0±0.3 1.5±0.1 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating −60 −80 −60 −80 −5 −3 −5 35 1.3 150 −55 to +150 Unit V 1 2 2.0±0.5.

2SB0929A : Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A 8.5±0.2 Unit: mm 3.4±0.3 1.0±0.1 6.0±0.2 10.0±0.3 1.5±0.1 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating −60 −80 −60 −80 −5 −3 −5 35 1.3 150 −55 to +150 Unit V 1 2 2.0±0.5.

2SB0930 : Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0930 2SB0930A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150 Unit V 1 2 2.0±0.5 .

2SB0930A : Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0930 2SB0930A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150 Unit V 1 2 2.0±0.5 .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)