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2SB821

Part Number	2SB821
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Oct 14, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB821 DESCRIPTION ·High Collector-E...
Datasheet	2SB821 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB821 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in audio amplifier, voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -300 250 125 mA mW ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.
iscsemi.
com1 isc &...

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