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2N6581

Part Number	2N6581
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Oct 17, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6581 DESCRIPTION ·Excellent Safe O...
Datasheet	2N6581 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6581 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) APPLICATIONS ·Off-line power supplies ·Switching amplifiers ·Inverters/Converters ·Motor speed control circuits ·Switching regulator ·Solenoid& relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 550 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9.
0 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.
4 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark ...

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