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2N5657G

Part Number	2N5657G
Manufacturer	ON Semiconductor
Description	Plastic NPN Silicon High-Voltage Power Transistors
Published	Oct 24, 2016
Detailed Description	2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated...
Datasheet	2N5657G PDF File

Overview

2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays.
Features • Excellent DC Current Gain • High Current−Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N5655G 2N5657G VCEO 250 350 Vdc Collector−Base Voltage 2N5655G 2N5657G VCB Vdc 275 375 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 6.
0 Vdc IC 0.
5 Adc ICM 1.
0 Adc IB 1.
0 Adc PD 20 W 0.
16 W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should ...

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