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2N6107

GME
Part Number 2N6107
Manufacturer GME
Description PNP Epitaxial Silicon Transistor
Published Oct 25, 2016
Detailed Description PNP Epitaxial Silicon Transistor FEATURES z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z H...
Datasheet PDF File 2N6107 PDF File

2N6107
2N6107

Overview
PNP Epitaxial Silicon Transistor FEATURES z DC Curent Gain Specified to 7A.
z Collector-Emitter Sustaining Voltage.
z High Current Gain.
Pb Lead-free Production specification 2N6107 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Continuous Peak Collector Dissipation Junction and Storage Temperature -70 V -5 V -7 A -10 3A 2W -65 to +150 ℃ X029 Rev.
A www.
gmicroelec.
com 1 Production specification PNP Epitaxial Silicon Transistor 2N6107 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Breakdown Voltage VCEO(SUS) IC=-100mA,IB=0 -70 V Collector Cut-off Current ICEO VCE=-60V,IB=0 -1 mA Collector Cut-off Current ICEX VCE=-80V,VEB(off)=1.
5V -10...


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