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TIP29C

Part Number TIP29C
Manufacturer SavantIC
Title Silicon NPN Power Transistors
Description ·With TO-220C package ·Complement to type TIP30/30A/30B/30C APPLICATIONS ·For use in general purpose power amplifier and switching applications ...
Features ...

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TIP29 : SYMBOL Collector Emitter (sus) Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Storage Temperature Junction Temperature VCEO VCBO VEBO IC ICM IB PD PD Tstg Tj TIP29 TIP30 40 40 TIP29A TIP29B TIP30A TIP30B 60 80 60 80 5.0 1.0 3.0 0.4 30 2.0 16 - 65 to +150 150 TIP29C TIP30C 100 100 UNIT V V V A A A W W mW/ºC ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 4.167 62.5 .

TIP29 : TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C July 2008 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : TIP29 : TIP29A : TIP29B : TIP29C VCEO Collector-Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 40 60 80 100 40 60 80 100 5 1 3 0.4 30 2 150 .

TIP29 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Pulse 3 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 0.4 A 30 W 150 ℃ Tstg St.

TIP29 : TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO 40 60 80 100 Vdc Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCB Vdc 40 60 80 100 Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 1.0 A.

TIP29 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

TIP29 : TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP30 Series 30 W at 25°C Case Temperature 1 A Continuous Collector Current 3 A Peak Collector Current Customer-Specified Selections Available This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP29 80 Collector-base voltage (IE = 0) ECollector-emitter voltage (IB = 0) ETEmitter-base voltage Continuous collector current LPeak collector current (see Note 1) OContinuous base curre.

TIP29 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP29,A,B,C(NPN) TIP30,A,B,C(PNP) Features • • MHaoluongetinngfreTeoragvuaeila: b5leinu-plbosnMreaqxuiemsut mby adding suffix "-HF" • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) x Marking: Type Number • Rth(jc) is 4.167OC/W, Rth(ja) is 62.5OC/W • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings 1.0 Amp Complementary Silicon Power Transistors Symbol Rating Rating Unit VCEO VCBO Collector-Emitter Voltage Collector-Base Voltage T.

TIP29 : TIP29 SERIES (TIP29/29A/29B/29C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Emitter Voltage Collector Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C : TIP29 : TIP29A : TIP29B : TIP29C VCBO VCEO Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current &Collector Dissipation ( TC=25 ) &Collector Dissipation ( TA=25 ) Junction Temperature Storage Temperature VEBO IC IC IB PC PC TJ TSTG Rating 40 60 80 100 40 60 80 100 5 1 3 0.4 30 2 150 -65 ~ 150 Unit V V V V V V V V V A A A W W & & &ELECTRICA CHARACTERISTICS (TC =25 ) TO-220 .

TIP29 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP29 Series TRANSISTOR (NPN) FEATURES z Designed for Use in General Purpose Amplifier and Switching Applications TO – 126 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC ICP PC RθJA Tj Tstg Parameter Collector-Base Voltage TIP29 TIP29A TIP29B TIP29C Collector-Emitter Voltage TIP29 TIP29A TIP29B TIP29C Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 40 60 80 100 40 60 80 100 5 1 3 1.25 10.

TIP29 : ·With TO-220C package ·Complement to type TIP30/30A/30B/30C APPLICATIONS ·For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP29 VCBO Collector-base voltage TIP29A TIP29B Open emitter TIP29C TIP29 VCEO Collector-emitter voltage TIP29A TIP29B Open base TIP29C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature Open collector TC=25 VALUE 40 60 80 100 40 60 80 100 5 1 3 0.4 30 -65~150 -6.

TIP2955 : TIP2955 PNP SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK JANUARY 1972 - REVISED MARCH 1997 q Designed for Complementary Use with the TIP3055 Series 90 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q 15 A Continuous Collector Current Customer-Specified Selections Available C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) (see Note 1) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see.

TIP2955 : The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. 3 2 1 TO-247 Figure 1. Internal schematic diagrams Table 1. Device summary Order code TIP2955 TIP3055 Marking TIP2955 TIP3055 Package TO-247 Packaging tube March 2008 . Rev 5 1/7 www.st.com 7 Absolute maximun rating 1 Absolute maximun rating Table 2. Symbol Absolute maximum rating Parameter Note: VCBO VCER VCEO VEBO IC IB Ptot Tstg TJ Collector-emitter voltage (IE = 0) Collector-emitter voltage (RBE = 100 Ω) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Base current Total dissipation at Tc ≤25°C Storage tem.

TIP2955 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP3055/D Complementary Silicon Power Transistors TIP3055 PNP TIP2955 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ.

TIP2955 : TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20 − 70 @ IC = 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCB VEB IC IB PD TJ, Tstg Value 60 70 100 7.0 15 7.0 90 0.72 – 65 to .

TIP2955 : SEMICONDUCTORS PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for power switching circuits, series and shunt regulators, output stage and hi-fi amplifiers. The complementary is the TIP2955 For PNP types Voltage and Curent are Negative. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT tJ ts Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation Junction Temperature Storage Temperature range Value 100 60 7 15 7 90 150 -65 to +150 Unit V V V A A W °C http://www.DataSheet4U.net/ @ Tmb < 25° THERMAL CHARACTERI.

TIP2955 : ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type TIP3055 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A IB Base Current -7 A PC Collector Power Dissipation TC=25℃ 90 W Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -6.

TIP2955 : The TIP2955 is a silicon PNP transistor in a TO−247 type package designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 − 70 at IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) at IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . ..




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