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TIP147


Part Number TIP147
Manufacturer Central Semiconductor
Title COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Description The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manufactured by the epitaxial b...
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TIP140 : SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Continuous Total Power Dissipation at Tc = 25ºC Operating and Storage Junction Temperature Range *5ms 10% Duty Cycle THERMAL RESISTANCE From Junction to case From Junction to Ambient in free air VCBO VCEO VEB0 IC *ICM IB PD Tj, Tstg Rth (j-c) Rth (j-a) TIP140 TIP145 60 60 TIP141 TIP146 80 80 5.0 10 15 0.5 125 - 65 to +150 TIP142 TIP147 100 100 1.0 35.7 UNIT V V V A A A W ºC ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter S.

TIP140 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type TIP145 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 125 W 150 ℃ Tstg St.

TIP140 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP140/D Darlington Complementary Silicon Power Transistors designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) — TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) — TIP142, TIP147 • Monolithic Construction with Built–In Base–Emitter Shunt Resistor MAXIMUM RATINGS Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

TIP140 : Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145 = 80 Vdc (Min) − TIP141, TIP146 = 100 Vdc (Min) − TIP142, TIP147 • Monolithic Construction with Built−In Base−Emitter Shunt Resistor • These are Pb−Free Devices* www.onsemi.com 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS MAXIMUM RATINGS Rating TIP140 TIP141 TIP142 Symbol TIP145 TIP146 TIP147 Unit.

TIP140 : The TIP140, TIP141 and TIP142 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TIP147 respectively. TO-218 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 o C Storage Temperature Max. Operating Junction Tempe.

TIP140 : TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147 1 TO-3P NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP140 : TIP141 : TIP142 Value 60 80 100 60 80 100 5 10 15 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C 1.Base 2.Collector 3.Emitter Equivalent Circuit C VCEO Collector-Emitter Voltage : TIP140 : TIP141 : TIP142 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipati.

TIP140 : The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching applications where high gain is required. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC TIP140 TIP145 60 TIP141 TIP146 80 TIP142 TIP147 100 60 80 100 5.0 10 20 0..

TIP140 : TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with TIP145, TIP146 and TIP147 125 W at 25°C Case Temperature 10 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP140 Collector-base voltage (IE = 0) TIP141 TIP142 TIP140 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Contin.

TIP140 : TIP140 – TIP141 – TIP142 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in TO-3PN plastic packtage. They are intended for use in power linear and switching application. The complementary are TIP145, TIP146, TIP147. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage http://www.DataSheet4U.net/ Ratings TIP140 TIP141 TIP142 TIP140 TIP141 TIP142 Value 60 80 100 60 80 100 5.0 10 15 0.5 125 150 -65 to +150 Unit V VCBO VEBO IC IB PT TJ TS Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storag.

TIP140F : TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use 1 TO-3PF 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP140F : TIP141F : TIP142F Value 60 80 100 60 80 100 5 10 15 0.5 60 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C 1.Base Equivalent Circuit C B VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : TIP140F : TIP141F : TIP142F Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) B.

TIP140F : ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type TIP145F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 60 W 150 ℃ Tstg .

TIP140F : Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (repetitive) Base Current Total Power Dissipation @ Tc 25ºC Operating And Storage Junction Temperature Range SYMBOL VCBO VCEO VEB0 IC ICM IB PD Tj, Tstg TIP140F TIP145F 60 60 TIP141F TIP146F 80 80 5.0 10 20 0.5 60 - 65 to +150 TIP142F TIP147F 100 100 UNIT V V V A A A W ºC THERMAL RESISTANCE From Junction to case Rth (j-c) 1.0 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cutoff Current ICBO VCB =Rated VCBO, IE=0 Collector Cutoff Current Emitter Cutoff Current ICEO IEBO VCE =1/2 rated VCEO, IB=0 VEB =5.0.

TIP140G : Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145 = 80 Vdc (Min) − TIP141, TIP146 = 100 Vdc (Min) − TIP142, TIP147 • Monolithic Construction with Built−In Base−Emitter Shunt Resistor • These are Pb−Free Devices* www.onsemi.com 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS MAXIMUM RATINGS Rating TIP140 TIP141 TIP142 Symbol TIP145 TIP146 TIP147 Unit.

TIP140T : ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type TIP145T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 80 W 150 ℃ Tstg Storag.

TIP140T : TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8kΩ R2 ≅ 0.12kΩ R2 E Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP140T : TIP141T : TIP142T 60 V 80 V 100 V VCEO Collector-Emitter Voltage : TIP140T : TIP141T : TIP142T 60 V 80 V 100 V VEB.

TIP140T : TIP140T/141T/142T TIP140T/141T/142T ◎ SEMIHOW REV.A0,Oct 2007 TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP140T VCBO 60 V : TIP141T 80 V : TIP142T 100 V Collector-Emitter Voltage : TIP140T VCEO 60 V : TIP141T 80 V : TIP142T 100 V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Curre.

TIP141 : SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Continuous Total Power Dissipation at Tc = 25ºC Operating and Storage Junction Temperature Range *5ms 10% Duty Cycle THERMAL RESISTANCE From Junction to case From Junction to Ambient in free air VCBO VCEO VEB0 IC *ICM IB PD Tj, Tstg Rth (j-c) Rth (j-a) TIP140 TIP145 60 60 TIP141 TIP146 80 80 5.0 10 15 0.5 125 - 65 to +150 TIP142 TIP147 100 100 1.0 35.7 UNIT V V V A A A W ºC ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter S.




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