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TIP47


Part Number TIP47
Manufacturer TAITRON
Title NPN High Voltage Power Transistors
Description VCBO VCEO Collector-Base Voltage: Collector-Emitter Voltage: TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50 VEBO Emitter-Base Voltage IC Col...
Features
• Application for High Voltage and Switching Circuit
• RoHS Compliant Maximum Ratings (T Ambient=25ºC unless noted otherwise) TO-220 Symbol Description VCBO VCEO Collector-Base Voltage: Collector-Emitter Voltage: TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50 VEBO Emitter-Base Voltage IC C...

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TIP41 : TIP41/41A/41B/41C ® Pb Free Plating Product TIP41/TIP41A/TIP41B/TIP41C Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Complement to TIP42/TIP42A/TIP42B/TIP42C 9.90±0.20 φ3.60±0.20 4.50±0.20 1.30±0.20 6.50±0.20 15.70±0.20 2.80±0.20 9.19±0.20 COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3.02±0.20 13.08±0.20 1.27±0.20 1.52±0.20 2.40±0.20 1 23 TO-220C 2.54typ 2.54typ Package Dimension 0.80±0.20 0.50±0.20 Dimensions in Millimeters MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP41 VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage IC .

TIP41 : SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Derate above 25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Unclamped Inductive Load Energy Storage Temperature Junction Temperature VCEO VCBO VEBO IC ICM IB PD PD *E Tstg Tj TIP41 TIP42 40 40 TIP41A TIP42A 60 60 TIP41B TIP42B 80 80 5.0 6.0 10 2.0 65 520 2.0 16 62.5 150 - 65 to +150 TIP41C TIP42C 100 100 UNIT V V V A A A W mW/ºC W mW/ºC mJ ºC ºC THERMAL RESISTANCE Junction to Case Rth (j-c.

TIP41 : .

TIP41 : TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor Features • Complementary to TIP42/TIP42A/TIP42B/TIP42C July 2008 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C VCEO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 40 60 80 100 40 60 80 100 5 6 10 2 65 2 150 -.

TIP41 : SEMICONDUCTORS NPN TIP41-A-B-C SILICON POWER TRANSISTORS They are epitaxial-base NPN power transistors mounted in jedec TO-220 plastic package. They are intended for use in medium power linear and switching applications. PNP complements are TIP42-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C Value 40 60 80 100 40 60 80 100 Unit VCBO Collector-Base Voltage http://www.DataSheet4U.net/ V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A ICM Collector Peak Current 10 A 04/10/2012 .

TIP41 : TIP41 / TIP41C Elektronische Bauelemente NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Medium Power Linear Switching Applications TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current -Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings TIP41 40 40 5 6 2 150, -55~150 TIP41C 100 100 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector - Base Breakdown Voltage Collector - Emitter Breakdown.

TIP41 : ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min) ·Complement to Type TIP42 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 2 A 65 W 2 150 ℃ T.

TIP41 : The CENTRAL SEMICONDUCTOR TIP41 SERIES types are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature SYMBOL TIP41 VCBO 40 VCEO 40 VEBO IC ICM IB PD PD TJ, Tstg TIP41A TIP41B TIP41C 60 80 100 60 80 100 5.0 6.0 10 2.0 65 2.0 -65 to +150 UNITS V V V A A A W W °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TES.

TIP41 : TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP42 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperatu.

TIP41 : TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • ESD Ratings: Machine Model, C; 400 V Human Body Model, 3B; 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage TIP41, TIP42 VCEO 40 Vdc TIP41A, TIP42A 60 TIP41B, TIP42B 80 TIP41C, TIP42C 100 Collector−Base Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCB 40 Vdc 60 80 100 Emitter−Base Voltage Collector Current− Continuous Peak VEB IC 5.0 Vdc 6.0 Adc 10 Bas.

TIP41 : TIP 41 series (TIP41/41A//41B/41C) TIP41/41A/41B/41C ◎ SEMIHOW REV.A0.Oct 2007 TIP 41 series (TIP41/41A//41B/41C) TIP41/41A/41B/41C Medium Power Linear Switching Applications - Complement to TIP42/42A/42B/42C Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP41 : TIP41A : TIP41B : TIP41C VCBO 40 60 80 100 V V V V Collector-Emitter Voltage : TIP41 : TIP41A : TIP41B : TIP41C VCEO 40 60 80 100 V V V V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VEBO IC ICP IB PC PC TJ TSTG 5.

TIP41 : SEMICONDUCTOR TIP41 (NPN) Series TIP42 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 6A/40~100V/65W FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-220AB package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.5Vdc (MAX.) @ IC = 6A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP41,TIP42 = 60Vdc (Min.) - TIP41A,TIP42A = 80Vdc (Min.) - TIP41B, TIP42B = 100Vdc (Min.) - TIP41C, TIP42C DC Current Gain hFE = 30 (Min.) @ Ic = 0.3A High Current Gain - Bandwidth product fT = 3.0 M.

TIP41 : SEMICONDUCTOR TECHNICAL D ATA TIP41/41A/41B/41C TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURES Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range TIP41 40 40 TIP41A TIP41B 60 80 60 80 5 6 2 150 -55to+150 A E D NN 123 O C F B P J H DIM A B C D E F H J N O P MILLIMETERS 10.15 ± 0.15 15.30 MAX 1.3 0.1/-0.15 0.8 ± 0.1 3.8 ± 0.2 2.7 ± 0.2 0.4 ± 0.15 13.6 ± 0.2 2.54 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 1 BASE 2 COLLECTOR 3 EMITTER TO-220AB .

TIP41 : ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For medium power linear switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Product Specification TIP41/41A/41B/41C ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP41 VCBO Collector-base voltage TIP41A TIP41B Open emitter TIP41C TIP41 VCEO Collector-emitter voltage TIP41A TIP41B Open base TIP41C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature Open collector TC=25 Ta=25 VALUE 40 60 80 100 40 60 80 100.

TIP41A : TIP41/41A/41B/41C ® Pb Free Plating Product TIP41/TIP41A/TIP41B/TIP41C Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Complement to TIP42/TIP42A/TIP42B/TIP42C 9.90±0.20 φ3.60±0.20 4.50±0.20 1.30±0.20 6.50±0.20 15.70±0.20 2.80±0.20 9.19±0.20 COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3.02±0.20 13.08±0.20 1.27±0.20 1.52±0.20 2.40±0.20 1 23 TO-220C 2.54typ 2.54typ Package Dimension 0.80±0.20 0.50±0.20 Dimensions in Millimeters MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP41 VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage IC .

TIP41A : SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Derate above 25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Unclamped Inductive Load Energy Storage Temperature Junction Temperature VCEO VCBO VEBO IC ICM IB PD PD *E Tstg Tj TIP41 TIP42 40 40 TIP41A TIP42A 60 60 TIP41B TIP42B 80 80 5.0 6.0 10 2.0 65 520 2.0 16 62.5 150 - 65 to +150 TIP41C TIP42C 100 100 UNIT V V V A A A W mW/ºC W mW/ºC mJ ºC ºC THERMAL RESISTANCE Junction to Case Rth (j-c.

TIP41A : .




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