DatasheetsPDF.com

MJD243

Part Number	MJD243
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 6, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Vo...
Datasheet	MJD243 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 40(Min) @ IC= 0.
2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.
3V(Max.
)@ IC= 0.
5 A ·Complement to the PNP MJD253 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Colle...

Similar Datasheet

MJD20 P-channel power MOSFET - Sanken
MJD200 NPN Transistor - INCHANGE
MJD200 Complementary Plastic Power Transistors - ON
MJD200 D-PAK - Fairchild
MJD200 SILICON POWER TRANSISTORS - Motorola
MJD210 Silicon PNP Power Transistor - Inchange Semiconductor
MJD210 PNP Transistor - Fairchild
MJD210 Complementary Plastic Power Transistors - ON
MJD210 SILICON POWER TRANSISTORS - Motorola
MJD210 PNP Transistor - UTC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)