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TIP42C Datasheet PDF


Part Number TIP42C
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP41C ·100% avalan...
Features o Ambient 62.5 ℃/W isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor TIP42C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= ...

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TIP100 : TIP100 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage IC Collector Current Continuous ICM Collector Current Peak IB Base Current Power Dissipation upto TC=25°C PD Power Dissipation upto TA=25°C Power Dissipation Derate above TA=25°C RθJA Thermal Resistance from Junction to Ambient in Free Air RθJC Thermal Resistance from Junction to Case TJ, TSTG Operating Junction and Storage Temperature Range TIP101 80 80 5.0 8.0 15 1.0 80 2.0 16 62.5 1.56 -65 to +150 TIP102 100 100 Unit V V V A A A W W mW/° C ° C /W ° C /.

TIP100 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105 VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106 VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors • TO–220AB Compact Package *MAXIMUM RATINGS Rating TIP100, T.

TIP100 : TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built−in Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER T.

TIP100 : TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with TIP105, TIP106 and TIP107 80 W at 25°C Case Temperature 8 A Continuous Collector Current Maximum VCE(sat) of 2.5 V at IC = 8 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP100 Collector-base voltage (IE = 0) TIP101 TIP102 TIP100 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current .

TIP100 : TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 @ 10kW R2 @ 0.6kW R2 E Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage : TIP100 : TIP101 : TIP102 Collector-Emitter Voltage : TIP100 : TIP101 : .

TIP100 : Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Operating And Storage Junction Temperature VEBO IC ICM IB PD PD Tj , Tstg TIP100/105 60 60 TIP101/106 80 80 5 8 15 1 80 2 16 - 65 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 1.56 62.5 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut Off Current ICEO VCE=30V, IB=0 VCE=40V, IB=0 TIP100/105 TIP101/106 VCE=50V, IB=0 TIP102/107 Collector Cut .

TIP100 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Low Collector-Emitter Saturation Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • TO-220 Compact package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings Symbol Parameter Rating Unit VCEO Collector-Emitter Voltage TIP100 TIP101 TIP102 60 80 100 V VCBO Collector-Base Voltage TIP100 TIP101 60 8.

TIP100 : SEMICONDUCTORS NPN TIP100-101-102 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP105-106-107 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 Value 60 80 100 60 80 100 5 Unit V VCEO Collector-Emitter Voltage http://www.DataSheet4U.net/ V VEBO .

TIP100 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A ·Complement to Type TIP105 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous Collector P.

TIP100 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

TIP100 : TIP100, TIP101, TIP102 Silicon NPN Darlington Power Amp, Switch TO−220 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Base TIP100 . Voltage, .. V. .C.B.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TIP101 . 80V TIP102 100V Collecto.

TIP101 : TIP100/101/102 TIP100/101/102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP105/106/107 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP100 : TIP101 : TIP102 VCBO 60 80 100 V V V Collector-Emitter Voltage : TIP100 : TIP101 : TIP102 VCEO 60 80 100 V V V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=.

TIP101 : TIP100 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage IC Collector Current Continuous ICM Collector Current Peak IB Base Current Power Dissipation upto TC=25°C PD Power Dissipation upto TA=25°C Power Dissipation Derate above TA=25°C RθJA Thermal Resistance from Junction to Ambient in Free Air RθJC Thermal Resistance from Junction to Case TJ, TSTG Operating Junction and Storage Temperature Range TIP101 80 80 5.0 8.0 15 1.0 80 2.0 16 62.5 1.56 -65 to +150 TIP102 100 100 Unit V V V A A A W W mW/° C ° C /W ° C /.

TIP101 : TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 @ 10kW R2 @ 0.6kW R2 E Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage : TIP100 : TIP101 : TIP102 Collector-Emitter Voltage : TIP100 : TIP101 : .

TIP101 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105 VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106 VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors • TO–220AB Compact Package *MAXIMUM RATINGS Rating TIP100, T.

TIP101 : TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built−in Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER T.




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