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2SD1918

Part Number	2SD1918
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 9, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·High fT：fT=80MHz(TYP) ·High Collector-Emi...
Datasheet	2SD1918 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Excellent linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction ...

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