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D1980

Part Number	D1980
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 9, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1980 DESCRIPTION ·Darlington connection for high DC current...
Datasheet	D1980 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1980 DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary PNP types:2SB1316 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 2.
0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.
0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1980 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDIT...

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