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BDS18

Part Number	BDS18
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 15, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lo...
Datasheet	BDS18 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for power liner and switching -Gener purpose power .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.
0 V IC Collector Current-Continuous -8.
0 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC<75℃ TJ Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BDS18 isc website：www.
iscsemi.
com 1 isc & iscs...

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