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BDS19

Part Number	BDS19
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 15, 2016
Detailed Description	isc Silicon PNP Power Transistor BDS19 DESCRIPTION ·High Voltage: VCEV= -150V(Min) ·Low Saturation Voltage- : VCE(sat)...
Datasheet	BDS19 PDF File

Overview

isc Silicon PNP Power Transistor BDS19 DESCRIPTION ·High Voltage: VCEV= -150V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.
5V(Max)@ IC= -4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -2 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A W ...

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