DatasheetsPDF.com

BD245D

Inchange Semiconductor
Part Number BD245D
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 17, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE>40@IC = 1A ·Collect...
Datasheet PDF File BD245D PDF File

BD245D
BD245D


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE>40@IC = 1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A ·Designed for Complementary Use with the BD246D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 80 W Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 1.
56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 42 ℃/W BD245D isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ;IB= 0.
3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 2.
5A VBE(on)-1 Base-Emitter On Voltage IC= 3A ; VCE= 4V VBE(on)-2 Base-Emitter On Voltage IC= 10A ; VCE= 4V ICEO Collector Cutoff Current VCE= 120V; IB=0 ICBO Collector Cutoff Current VCB= 160V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 3A ; VCE= 4V hFE-3 DC Current Gain IC= 10A ; VCE= 4V BD245D MIN MAX UNIT 120 V 1.
0 V 4.
0 V 1.
6 V 3.
0 V 0.
7 mA 0.
4 mA 1.
0 mA 40 20 4 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the ap...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)