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2N6582

Part Number	2N6582
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 20, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet	2N6582 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5 V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ...

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