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BU912

Part Number	BU912
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Dec 15, 2016
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·...
Datasheet	BU912 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 60 W 150...

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