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MS1455

Part Number	MS1455
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE TRANSISTORS
Published	Dec 26, 2016
Detailed Description	RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS Features • 836 MHz • 12.5 VOLTS • POUT = 45 WATTS • GP = 4.7 dB MI...
Datasheet	MS1455 PDF File

Overview

RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS Features • 836 MHz • 12.
5 VOLTS • POUT = 45 WATTS • GP = 4.
7 dB MINIMUM • COMMON BASE CONFIGURATION DESCRIPTION: The MS1455 is a 12.
5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range.
Internal impedance matching assures optimum gain and efficiency across the entire frequency band.
Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability.
MS1455 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VEBO Emitter-Base Voltage VCEO Collector-Emitter Voltage VCES Collector-Emitter ...

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