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BC847S

Part Number	BC847S
Manufacturer	JCET
Description	DUAL TRANSISTOR
Published	Jan 8, 2017
Detailed Description	JC(T JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S DUAL TRANSISTO...
Datasheet	BC847S PDF File

Overview

JC(T JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-363 Plastic-Encapsulate Transistors BC847S DUAL TRANSISTOR (NPN+NPN) APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous PD Power Dissipation 00 200 RθJA Thermal Resistance.
Junction to Ambient 625 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~+150 Unit V mA mW ℃/W ℃ SOT-363 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol T...

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