2N7000K Datasheet

2N7000K N-channel MOSFET

2N7000K VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current IDP Continuous Pulsed (Note 1) 500 2000 PD Drain Power Dissipation 625 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Note 1: Pulse Width<10µs, Duty Cycle<1% Unit V V mA mA m.

Features

• ESD protected 2000V
• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability
• RoHS compliance TO-92 Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7000K VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current IDP Continuous Pulsed (Note 1) 500 2000 PD Drain Power Dissipation 625 TJ Junction Temperature 150 TSTG Storage Tem.