DatasheetsPDF.com

D2611

JCET
Part Number D2611
Manufacturer JCET
Description NPN Transistor
Published Feb 1, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D 2611 TRANSISTOR (NPN) FEATU...
Datasheet PDF File D2611 PDF File

D2611
D2611

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-126 Plastic-Encapsulate Transistors D 2611 TRANSISTOR (NPN) FEATURE power switching applications TO-126 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 0.
2 A PC Collector Power Dissipation 1W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 1.
EMITTER 2.
COLLECTOR 3.
BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) 123 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)