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2SA1666U

SEMTECH
Part Number 2SA1666U
Manufacturer SEMTECH
Description PNP Transistor
Published Feb 21, 2017
Detailed Description 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25℃) Param...
Datasheet PDF File 2SA1666U PDF File

2SA1666U
2SA1666U

Overview
2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range 1) When mounted on a 250 mm2 x 0.
8 t ceramic substrate.
Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj Tstg Value 50 50 5 2 0.
4 0.
5 1 1) 150 - 55 to + 150 Unit V V V A A W ℃ ℃ Characteristics at Ta = 25℃ Parameter Symbol Min.
Typ.
Max.
Unit DC Current Gain at -VCE = 2 V, -IC = 500 mA at -VCE = 2 V, -IC = 1.
5 A Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - hFE 40 - - - Collector Base Cutoff Current at -VCB = 50 V -ICBO - - 100 nA Emitter Base Cutoff Current at -VEB = 5 V -IEBO - - 100 nA Collector Emitter Breakdown Voltage at -IC = 10 mA -V(BR)CEO 50 - - V Collector Emitter Saturation Voltage at -IC = 1 A, -IB = 50 mA -VCE(sat) - - 0.
5 V Base Emit...


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