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DG630

Part Number	DG630
Manufacturer	DGME
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Published	Apr 12, 2017
Detailed Description	DG630 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG630N，，，，，。，，。 DG630 is an N-channel enhance...
Datasheet	DG630 PDF File

Overview

DG630 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG630N，，，，，。，，。 DG630 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 200 9.
0 0.
4 18 V A Ω pF Symbol Package 1 /8 ABSOLUTE MAXIMUM RA...

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