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2N3866

Part Number	2N3866
Manufacturer	Motorola
Description	HIGH-FREQUENCY TRANSISTOR
Published	May 8, 2017
Detailed Description	2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector ...
Datasheet	2N3866 PDF File

Overview

2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation Ca Jq = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO 'c PD T stg Value 30 55 3.
5 0.
4 5.
0 28.
6 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 5.
0 mAdc, Rbe = 10 n) Collector-Emitter Sustaining Voltage dC = 5.
0 mAdc, Bl = 0) Emitter-Base Breakdown Voltage (IE = 100 MAdc, lc = 0) Collector Cutoff Current (VC E = 28 Vdc, Bl = 0) Collector Cutoff Current (Vce = 30 Vdc, Vbe = -1.
5 Vdc (Rev.
), Jq = 200°C) (Vce = 55 Vdc, V B e = -1.
5 Vdc (Rev.
) Emitter Cutoff Current (V B e = 3.
5 Vdc, lc = 0) ON CHARACTERISTICS DC Current Gain dC = 360 mAdc, Vce = 5.
0 Vdc) dC = ...

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