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VN10LM

Part Number	VN10LM
Manufacturer	Motorola
Description	TMOS FET Transistor
Published	May 12, 2017
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE Order this d...
Datasheet	VN10LM PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE Order this document by VN10LM/D VN10LM 1 23 CASE 29–05, STYLE 22 TO–92 (TO–226AE) MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current – Continuous(1) – Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C VDSS VGS VGSM ID IDM PD 60 Vdc ± 20 Vdc ± 40 Vpk 0.
3 Adc 1.
0 1.
0 Watts 8.
0 mW/°C Operating and Storage Temperature Range TJ, Tstg – 40 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Drain–Source Breakdown...

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