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2N6124

Multicomp
Part Number 2N6124
Manufacturer Multicomp
Description Bipolar Transistor
Published May 16, 2017
Detailed Description Transistor General Purpose Description: A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed fo...
Datasheet PDF File 2N6124 PDF File

2N6124
2N6124

Overview
Transistor General Purpose Description: A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed for general-purpose amplifier and Low speed switching circuits.
Features: •  High DC Current Gain •  Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min.
•  Monolithic Construction With Built-in Base-Emitter Shunt Resistors Pin Configuration: 1.
Emitter 2.
Base 3.
Collector Maximum Ratings: Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous -Peak Base Current Total Device Dissipation -(TC = +25°C), Derate Above 25°C Total Device Dissipation -(TA = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Junction-to-Case, Thermal Resistance, Junction-to-Ambient, Symbol VCEO VCB VEB IC IB PD TJ Tstg RthJC RthJA Rating 80 5 8 16 120 75 0.
6 2.
2 0.
0175 -65 to +150 1.
67 57 Unit V A mA W W/°C °C °C/W www.
element14.
com www.
farnell.
co...


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