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2N4239

TT
Part Number 2N4239
Manufacturer TT
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Published May 17, 2017
Detailed Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V(Min), VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideall...
Datasheet PDF File 2N4239 PDF File

2N4239
2N4239


Overview
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V(Min), VCEO=80V(Min) • Hermetic TO-39 Metal package.
• Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 1.
0A IB Base Current 0.
5A PD Total Power Dissipation at TA = 25°C 1.
0W Derate Above 25°C 5.
7mW/°C PD Total Power Dissipation at TC = 25°C 6W Derate Above 25°C 34mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min.
Typ.
Max.
Units 175 °C/W 29 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice...


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