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1N3213R

GeneSiC
Part Number 1N3213R
Manufacturer GeneSiC
Description Silicon Standard Recovery Diode
Published Jun 2, 2017
Detailed Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive No...
Datasheet PDF File 1N3213R PDF File

1N3213R
1N3213R

Overview
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N3212 thru 1N3214R VRRM = 400 V - 600 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3212 (R) 1N3213 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.
3 ms 4...


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