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1N5712

Part Number	1N5712
Manufacturer	LGE
Description	Small Signal Schottky Diodes
Published	Jun 5, 2017
Detailed Description	Features Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended...
Datasheet	1N5712 PDF File

Overview

Features Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range Mechanical Data Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx.
0.
13 gram ABSOLUTE RATINGS(LIMITING VALUES) Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Forw ard continuous current Junction and storage temperature range Maximumlead temperature for soldering during 10S at 4mmfromcase 1N5712 Small Signal Schottky Diodes VOLTAGE RANGE: 20 V POWER DISSIPATION: 430 mW DO - 35(GLASS) Dimensions in millimeters Symbols VRRM Ptot IFSM TJ/TSTG TL ...

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