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J174

Part Number J174
Manufacturer Vishay
Title P-Channel JFETs
Description The J/SST174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. This series simplifies series-...
Features D Low On-Resistance: J174 85 W D Fast Switching—tON: 25 ns D Low Leakage:
  –10 pA D Low Capacitance: 5 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good Frequency Response D Eliminates Additional Bufferin...

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J174 : The 30V InterFET J174 and J175 JFET’s are targeted for high gain low noise switching, commutator, and chopper applications. Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Drain 3 Gate 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage J174 Min J175 Min Unit 30 30 V -20 -7 mA 5 3 V Ordering Information Custom Part and Binning Options Available Part Number Description J174; J175 Through-Hole SMPJ174; SMPJ175 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMPJ174TR; SMPJ175TR 13” Tape and Reel: Max 9,000 Pieces J174COT; J175COT Chip Orientated Tra.

J174 : Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING 1 = 2 = 3 = source gate drain 1 handbook, halfpage 2 3 g MAM388 J174; J175; J176; J177 d s Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Gate current Total power dissipation up to Tamb = 50 °C Ptot max. J174 Drain current −VDS = 15 V; VGS = 0 Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDS on max. 85 125 250 300 Ω −IDSS min. max. 20 135 7 70 2 3.

J174 : J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G D S G TO-92 D SOT-23 Mark: 6W / 6X / 6Y S P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value - 30 30 50 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These .

J174 : P-Channel JFET Switch CORPORATION J174 – J177 / SST174 – SST177 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . . 300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/ oC NOTE: Stresses above those listed under "Absolut.

J174 : J174 J 175 J176 J177 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation Ta = 25°C Derate above 25°C Storage Temperature Range Symbol vDs Vdg VGS 'G PD Tstg Value 30 30 30 50 350 2.8 - 65 to + 1 50 Unit Vdc Vdc Vdc mA mW mW/°C °C ELECTRICAL CHARACTERISTICS

J174 : J174 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix J174 The J174 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 nchannel family, the J174 simplifies series-shunt switching applications . ƒ ƒ ƒ ƒ ƒ Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering FEATURES  DIRECT REPLACEMENT FOR SILICONIX J174  LOW ON RESISTANCE  LOW GATE OPERATING CURRENT  FAST SWITCHING  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Sto.

J175 : The 30V InterFET J174 and J175 JFET’s are targeted for high gain low noise switching, commutator, and chopper applications. Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Drain 3 Gate 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage J174 Min J175 Min Unit 30 30 V -20 -7 mA 5 3 V Ordering Information Custom Part and Binning Options Available Part Number Description J174; J175 Through-Hole SMPJ174; SMPJ175 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMPJ174TR; SMPJ175TR 13” Tape and Reel: Max 9,000 Pieces J174COT; J175COT Chip Orientated Tra.

J175 : Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING 1 = 2 = 3 = source gate drain 1 handbook, halfpage 2 3 g MAM388 J174; J175; J176; J177 d s Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Gate current Total power dissipation up to Tamb = 50 °C Ptot max. J174 Drain current −VDS = 15 V; VGS = 0 Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDS on max. 85 125 250 300 Ω −IDSS min. max. 20 135 7 70 2 3.

J175 : J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G D S G TO-92 D SOT-23 Mark: 6W / 6X / 6Y S P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value - 30 30 50 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These .

J175 : P-Channel JFET Switch CORPORATION J174 – J177 / SST174 – SST177 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . . 300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/ oC NOTE: Stresses above those listed under "Absolut.

J175 : The J/SST174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. This series simplifies series-shunt switching applications when combined with the Siliconix J/SST111 series. TO-226AA.

J175 : J174 J 175 J176 J177 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation Ta = 25°C Derate above 25°C Storage Temperature Range Symbol vDs Vdg VGS 'G PD Tstg Value 30 30 30 50 350 2.8 - 65 to + 1 50 Unit Vdc Vdc Vdc mA mW mW/°C °C ELECTRICAL CHARACTERISTICS

J175 : J175 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix J175 The J175 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 nchannel family, the J175 simplifies series-shunt switching applications . ƒ ƒ ƒ ƒ ƒ Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering FEATURES  DIRECT REPLACEMENT FOR SILICONIX J175  LOW ON RESISTANCE  LOW GATE OPERATING CURRENT  FAST SWITCHING  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Sto.

J175 : This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. 123 Straight Lead Bulk Packing 12 3 TO-92 1. Drain 2. Gate 3. Source Bent Lead Tape & Reel Ammo Packing Figure 1. J175 / J176 Device Package G S SOT-23 D Mark: 6W / 6X / 6Y Note: Source & drain are interchangeable. Figure 2. MMBFJ175 / 176 / 177 Device Package Ordering Information Part Number J175-D26Z J176-D74Z MMBFJ175 MMBFJ176 MMBFJ177 Marking J175 J176 6W 6X 6Y Package TO-92 3L TO-92 3L SOT-23 3L SOT-23 3L SOT-23 3L Packing Method Tape and Reel Ammo Tape and Reel Tape and Reel Tape and Reel ©1997 Semiconductor Components Industries, .

J176 : Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING 1 = 2 = 3 = source gate drain 1 handbook, halfpage 2 3 g MAM388 J174; J175; J176; J177 d s Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Gate current Total power dissipation up to Tamb = 50 °C Ptot max. J174 Drain current −VDS = 15 V; VGS = 0 Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDS on max. 85 125 250 300 Ω −IDSS min. max. 20 135 7 70 2 3.

J176 : J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G D S G TO-92 D SOT-23 Mark: 6W / 6X / 6Y S P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value - 30 30 50 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These .




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