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1N4444


Part Number 1N4444
Manufacturer Digitron Semiconductors
Title SWITCHING RECTIFIER
Description 1N4444 High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIER FEATURES  Available as “HR” (high reliabilit...
Features
 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive reverse voltage Peak working reverse voltage Average fo...

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1N4444 : 1N4444 General Purpose Silicon Rectifier DO−35 Type Package Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Average Forward Current, IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Forward DC Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Non−Repetitive Peak Forward Current (t =1s), IFSM . .

1N4444 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

1N4446 : 1N4446 Small Signal Diode Features: D DO−35 Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Max. Repetitive Reverse Voltage,VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Average Rectified Forward Current, IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA None−Repetitive Forward Surge Current, IFSM Pulse Width = 10.0 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

1N4446 : 1N4149, 1N4151-1N4154, 1N4446-1N4449 High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Peak reverse voltage Average rectified current Forward surge current, 8.3ms Operating junction temperature range Storage temperature range Symbol VRM IO IFSM TJ Tstg 4149 75V 4151 75V 4152 40V 4153 75V 1N 4154 4446 35V 75V 200mA 500mA -65° to 150°C -65° to 200°C 4447 75V 4448 75V 4449 75V ELECTRICAL CHARACTE.

1N4446 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

1N4446 : 1N4446 1N4446 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value VRRM Maximum Repetitive Reverse Voltage 100 IF(AV) Average Rectified Forward Current 200 IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 Tstg Storage Temperature Range TJ Operating Junction Temperature -65 to +200 175 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be .

1N4446 : The 1N4148, 1N4446, 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. handbook, halfpagke a MAM246 The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VRRM VR IF IFRM IFSM Ptot Tstg Tj repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature see Fig.2; note 1 square wave; Tj = 25 °C prior t.

1N4446-1 : These popular 1N4149, 1N4151, 1N4154 and 1N4446 – 1N4449 series of JEDEC registered switching/signal diodes are available with internal metallurgical bonded construction. These small low capacitance diodes, with very fast switching speeds, are hermetically sealed and bonded into a double-plug DO-35 package. They may be used in a variety of fast switching applications including computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety of other switching/signal diodes. Screening in reference to MIL-PRF-19500 available Important: For the latest information, visit our w.

1N4447 : 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 .

1N4447 : 1N4149, 1N4151-1N4154, 1N4446-1N4449 High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Peak reverse voltage Average rectified current Forward surge current, 8.3ms Operating junction temperature range Storage temperature range Symbol VRM IO IFSM TJ Tstg 4149 75V 4151 75V 4152 40V 4153 75V 1N 4154 4446 35V 75V 200mA 500mA -65° to 150°C -65° to 200°C 4447 75V 4448 75V 4449 75V ELECTRICAL CHARACTE.

1N4447 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

1N4447 : 1N4447 FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 75V • Peak reverse voltage:max. 100 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics ( Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Forward DC Current Maximum Average Forward Current Maximum Surge Forward Current at tp = 1 µs Power Dissipation Maximum Junction Temperature Storage Temperature Range Symbol VRM VR .

1N4447 : 1N4447 — Small Signal Diode 1N4447 Small Signal Diode August 2011 DO-35 Color Band Denotes Cathode Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 100 200 1.0 4.0 V mA A A TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to +200 175 °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2).

1N4447 : 1N4447 FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 75V • Peak reverse voltage:max. 100 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Certificate TH97/10561QM Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics ( Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Forward DC Current Maximum Average Forward Current Maximum Surge Forward Current at tp = 1 µs Power Dissipation Maximum Junction T.

1N4447-1 : These popular 1N4149, 1N4151, 1N4154 and 1N4446 – 1N4449 series of JEDEC registered switching/signal diodes are available with internal metallurgical bonded construction. These small low capacitance diodes, with very fast switching speeds, are hermetically sealed and bonded into a double-plug DO-35 package. They may be used in a variety of fast switching applications including computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety of other switching/signal diodes. Screening in reference to MIL-PRF-19500 available Important: For the latest information, visit our w.

1N4448 : Small Signal Diode 1N91x, 1N4x48, FDLL914, FDLL4x48 ORDERING INFORMATION Part Number Marking Package 1N914 914 DO−204AH (DO−35) 1N914−T50A 914 DO−204AH (DO−35) 1N914TR 914 DO−204AH (DO−35) 1N914ATR 914A DO−204AH (DO−35) 1N914B 914B DO−204AH (DO−35) 1N914BTR 914B DO−204AH (DO−35) 1N916 916 DO−204AH (DO−35) 1N916A 916A DO−204AH (DO−35) 1N916B 916B DO−204AH (DO−35) 1N4148 4148 DO−204AH (DO−35) 1N4148TA 4148 DO−204AH (DO−35) 1N4148−T26A 4148 DO−204AH (DO−35) 1N4148−T50A 4148 DO−204AH (DO−35) 1N4148TR 4148 DO−204AH (DO−35) 1N4148−T50R 4148 DO−204AH (DO−35) 1N4448 4448 DO−204AH (DO−35) 1N4448TR 4448 DO−204AH (DO−35) FDLL914 Black SOD−80 FDLL914A Black .




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