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2N5237

Part Number 2N5237
Manufacturer Aeroflex
Title NPN Power Silicon Transistor
Description NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 • TO-5 Package Maximum...
Features
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384
• TO-5 Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Total Power Dissipation @ @ TA TA = = +25 +25 °C °C (1) (2) Operating & Storage Temperature Ra...

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2N5230 : MAXIMUM RATINGS Rating Emitter-Collector Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N5229 2N5230 2N5231 VECO v CBO v EBO "C PD 10 15 15 20 30 30 50 0.5 2.86 30 50 50 PD TJ- Tstg 2.0 12 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 2N5229 2N5230 2N5231 CASE 26-03, STYLE 1 TO-46 (TO-206AB) LOW POWER CHOPPER TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Emitter-Collector Breakdown Voltage E(l.

2N5230 : 2N5229 (SILICON) 2N5230 2N5231 PNP SI LICON ANNULAR TRANSISTORS · •. designed for low·level, chopper applications requiring high speed operation. This series of devices offers excellent characteristics for use in servo·loop, sensing instrumentation and control amplifier for motor drive systems. These transistors can also be used as replace· ment devices for alloy·typetransistorswhere high BVEBO is required. • Low Offset Voltage - VEC(off) = 0.5mVdc(Max)@IB= 100"Adc • Low Dynamic "ON" Series Resistance - redON)= 6.0 Ohms (Max) @IB = 1.0 mAdc • Space Saving TO·46 Package PNPSILICON CHOPPER TRANSISTORS MAXIMUM RATINGS Rating ·Collector-Emitter Voltage Symbol 2N5229 2N5230 VCEO 10 20 2N5.

2N5231 : MAXIMUM RATINGS Rating Emitter-Collector Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N5229 2N5230 2N5231 VECO v CBO v EBO "C PD 10 15 15 20 30 30 50 0.5 2.86 30 50 50 PD TJ- Tstg 2.0 12 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 2N5229 2N5230 2N5231 CASE 26-03, STYLE 1 TO-46 (TO-206AB) LOW POWER CHOPPER TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Emitter-Collector Breakdown Voltage E(l.

2N5231 : 2N5229 (SILICON) 2N5230 2N5231 PNP SI LICON ANNULAR TRANSISTORS · •. designed for low·level, chopper applications requiring high speed operation. This series of devices offers excellent characteristics for use in servo·loop, sensing instrumentation and control amplifier for motor drive systems. These transistors can also be used as replace· ment devices for alloy·typetransistorswhere high BVEBO is required. • Low Offset Voltage - VEC(off) = 0.5mVdc(Max)@IB= 100"Adc • Low Dynamic "ON" Series Resistance - redON)= 6.0 Ohms (Max) @IB = 1.0 mAdc • Space Saving TO·46 Package PNPSILICON CHOPPER TRANSISTORS MAXIMUM RATINGS Rating ·Collector-Emitter Voltage Symbol 2N5229 2N5230 VCEO 10 20 2N5.

2N5232 : .

2N5237 : Data Sheet No. 2N5237 Type 2N5237 Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N5237 REF: MIL-PRF-19500/394 TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Disipation TA = 25oC ambient Derate above 25oC Power Disipation TA = 25oC ambient Derate above 25oC Thermal Impedance Operati.

2N5237 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) Uni.

2N5237S : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) Uni.

2N5238 : Data Sheet No. 2N5238 Type 2N5238 Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N5238 REF: MIL-PRF-19500/394 TO-5 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Disipation TA = 25 C ambient Derate above 25oC Power Disipation TA = 25oC ambient Derate above 25oC Thermal Impedance Operating.

2N5238 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) Uni.

2N5238 : ( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com .

2N5238 : NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 • TO-5 Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Total Power Dissipation @ @ TA TA = = +25 +25 °C °C (1) (2) Operating & Storage Temperature Range Thermal Resistance, Junction-to-Case Junction_to-Ambient Symbol VCEO VCBO VEBO IC PT Top, Tstg RθJC RθJA 2N4150 70 100 2N5237 120 150 10.0 4.0 10 175 -65 to +200 10.0 175.0 2N5238 170 200 Units Vdc Vdc Vdc Adc W W °C °C/W 1) Derate linearly @ 5.7 mW/°C for TA +25°C 2) Derate linearly @ 100 mW/°C for TC +25°C Electrical .

2N5238S : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) Uni.

2N5239 : www.DataSheet4U.com .

2N5239 : ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Switching regulator ·Inverters ·Power amplifiers ·Deflection circuits ·High-voltage bridge amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5239 Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 300 225 6 5 2 100 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Th.

2N5239 : .




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