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BFW43


Part Number BFW43
Manufacturer SGS
Title Silicon Planar PNP
Description ...
Features ...

File Size 375.09KB
Datasheet BFW43 PDF File








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BFW43 : BFW43 CASE 22-03, STYLE 1 TO-18 (TO-206AA) BFW44 CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH VOLTAGE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd TJ. T stg BFW BFW 43 44 150 150 150 150 66 0.1 0.4 2.66 0.7 4.0 1.4 2.5 8.0 14.3 -65 to +200 Symbol Rejc R6»ja Max 125 70 438 250 Unit Vdc V.

BFW43 : BFW43 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar PNP Device. VCEO = 150V IC = 0.05A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 10/10m (VCE / IC) * Maximum Working Voltage Min. 40 Typ. 60M Max. 150 0.05 0.4 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@semela.

BFW43 : The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its feature a VCEO of 150V are specified over a wide range of curent. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 C at T case ≤ 25 o C St orage Temperature Max. Operating Junction Temperature o Value -150 -150 -6 -0.1 0.4 1.4 -55 to 200 200 Unit V V V A W W o o C C 1/5 November 1997 BFW43 TH.

BFW44 : BFW43 CASE 22-03, STYLE 1 TO-18 (TO-206AA) BFW44 CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH VOLTAGE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd TJ. T stg BFW BFW 43 44 150 150 150 150 66 0.1 0.4 2.66 0.7 4.0 1.4 2.5 8.0 14.3 -65 to +200 Symbol Rejc R6»ja Max 125 70 438 250 Unit Vdc V.

BFW44 : .

BFW44 : BFW44 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 150V 5.08 (0.200) typ. IC = 0.05A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 150 0.05 Units V A - @ 10/.




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