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2N5666


Part Number 2N5666
Manufacturer Seme LAB
Title NPN BIPOLAR POWER SWITCHING TRANSISTORS
Description 2N5666 2N5667 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) NPN BIPOLAR ...
Features
• FAST SWITCHING
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS 45° TO-39 (TO-205AD) APPLICATIONS
• HIGH SPEED SWITCHING CIRCUITS
• POWER AMPLIFIERS 1 = Emitter Underside View 2 = Base 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise sta...

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2N5660 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.0 87.5 2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8 Unit Vdc Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5660, 2N5661 W W 0 C TH.

2N5660 : 2N5660 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 200V IC = 1A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1 – Base TO66 (TO213AA) PINOUTS 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 5.0/0.5 (VCE / IC) .

2N5660 : ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5660 2N5661 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N5660 Collector-base voltage 2N5661 2N5660 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N5661 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=100 Ta=25 Open collector Open base 300 6 2.0 0.5 20 W 2 200 -65~200 V A A Ope.

2N5661 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.0 87.5 2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8 Unit Vdc Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5660, 2N5661 W W 0 C TH.

2N5661 : 2N5661 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 300V IC = 1A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1 – Base TO66 (TO213AA) PINOUTS 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ (VCE / IC) * Maxim.

2N5661 : Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5661J) • JANTX level (2N5661JX) • JANTXV level (2N5661JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 100°C Operating Junction Temperature Storage Temperature Symbol VCE.

2N5661 : ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5660 2N5661 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N5660 Collector-base voltage 2N5661 2N5660 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N5661 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=100 Ta=25 Open collector Open base 300 6 2.0 0.5 20 W 2 200 -65~200 V A A Ope.

2N5661 : ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 2 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N5661 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless .

2N5662 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.0 87.5 2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8 Unit Vdc Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5660, 2N5661 W W 0 C TH.

2N5662 : 2N5662 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 200V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ (VCE / IC) * Maximum Working Voltage Min. 40 T.

2N5662 : Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5662J) • JANTX level (2N5662JX) • JANTXV level (2N5662JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 100°C Operating Junction Temperature Storage Temperature Symbol VCE.

2N5663 : 2N5663 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 300V 5.08 (0.200) typ. IC = 1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 300 1 Units V A Hz @ 5/0.5 (.

2N5663 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.0 87.5 2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8 Unit Vdc Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5660, 2N5661 W W 0 C TH.

2N5663 : Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5663J) • JANTX level (2N5663JX) • JANTXV level (2N5663JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 100°C Operating Junction Temperature Storage Temperature Symbol VCE.

2N5664 : TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices 2N5664 2N5665 Qualified Level JAN JANTX JANTXV Devices 2N5666 2N5666S 2N5667 2N5667S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current 2N5664 2N5665 Symbol 2N5666, S 2N5667, S Unit VCEO VCBO VEBO IB IC 200 250 6.0 1.0 5.0 2N5664 2N5666, S 2N5665 2N5667, S 2.5 (1) 1.2 (2) (3) 30 15 (4) -65 to +200 300 400 Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5664, 2N5665 @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 1) Derate linearly 14.3 mW/0C for TA +250C 2) Derate l.

2N5664 : ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5664 2N5665 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N5664 Collector-base voltage 2N5665 2N5664 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N5665 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 300 6 5.0 1.0 52.5 200 -65~200 V A A W Open emitt.

2N5664 : .




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