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C1210

IMP Inc
Part Number C1210
Manufacturer IMP Inc
Description Process C1210 CMOS 1.2mm Zero Threshold Devices
Published Mar 23, 2005
Detailed Description ® ISO 9001 Registered Process C1210 CMOS 1.2µ m Zero Threshold Devices Electrical Characteristics N-Channel Transistor ...
Datasheet PDF File C1210 PDF File

C1210
C1210

Overview
® ISO 9001 Registered Process C1210 CMOS 1.
2µ m Zero Threshold Devices Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis.
Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Symbol VTZLN γZLN βZLN IDSATZN Minimum 0.
55 64 0.
8 9 10 Minimum 0.
00 75 28 Typical 0.
15 0.
348 90 34 Typical 0.
75 0.
34 75 1.
0 0.
6 T=25oC Unless otherwise noted Maximum Unit Comments 0.
95 V 100x1.
2µm V1/2 100x1.
2µm 86 µA/V2 100x100µm 1.
2 µm 100x1.
2µm µm Per side V V Maximum 0.
30 105 40 Unit V V1/2 µA/...


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