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2N2895 Datasheet PDF


Part Number 2N2895
Manufacturer Solid State
Title NPN Silicon Transistor
Description ...
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File Size 159.90KB
Datasheet 2N2895 PDF File








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2N2890 : ISCFdÈŸ Ïû°Ÿ Ïû° text/html About keyword search: News Contact Employment Site part number search: Home 2N2890 (#23013) RFQ/Sample NPN Transistor Division Lawrence Mil -Spec (none) Shipping (none) Datasheet Qual Data (none) Contact Microsemi Package TO-5(STD) Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to Base Open Symbol Power IC BV(CBO) VCEO BVEBO Max Unit 5W 2A 100 V 80 V 5V Electrical Rating Symbol Min Typ Max Unit Collector Emitter Saturation Voltage (IB=0.2 mA, I C=1 mA, TA=25 ºC,300µ s pulse) VCE(sat) 0.75 V DC Current Gain (IC=1 mA, TA=25 ºC,300µ s pulse) .

2N2890 : www.DataSheet4U.com 2N2890 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 80V 5.08 (0.200) typ. IC = 2A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 80 2 Unit.

2N2890 : VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0 6.0 6.0 7.0 7.0 0.10 0.10 0.50 0.50 0.10 0.10 -0.10 0.025 0.025 --0.20 0.10 0.10 0.25 0.01** 0.01** 0.01* 0.01* 0.01* 10 50 0.01* -0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.01** 0.01** 0.10 -0.50*** 0.50*** 20 20 40 40 60 60 50 50 -50 50 50 --30 90 90 30 30 60 60 60 60 100 60 30 -30 30 20 30 30 40 60 50 50 50 -80 120 360 250 MIN 100 40 30 50 40 100 30 20 40 100 100 100 30 100 40 50 30 100 40 100 40 30 50 30 25 40 100 20 50 30 30 25 40 100 40 60 40 40 40 40 MAX 300 120 9.

2N2891 : 2N2891 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 80V 5.08 (0.200) typ. IC = 2A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 80 2 Units V A Hz @ 2/1 (VCE .

2N2891 : VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0 6.0 6.0 7.0 7.0 0.10 0.10 0.50 0.50 0.10 0.10 -0.10 0.025 0.025 --0.20 0.10 0.10 0.25 0.01** 0.01** 0.01* 0.01* 0.01* 10 50 0.01* -0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.01** 0.01** 0.10 -0.50*** 0.50*** 20 20 40 40 60 60 50 50 -50 50 50 --30 90 90 30 30 60 60 60 60 100 60 30 -30 30 20 30 30 40 60 50 50 50 -80 120 360 250 MIN 100 40 30 50 40 100 30 20 40 100 100 100 30 100 40 50 30 100 40 100 40 30 50 30 25 40 100 20 50 30 30 25 40 100 40 60 40 40 40 40 MAX 300 120 9.

2N2891 : SILICON NPN TRANSISTOR 2N2891 • V(BR)CEO = 80V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 3A ICM Peak Collector Current 5A IB Base Current 0.5A PD Total Power Dissipation at TA = 25°C 0.8W Derate Above 25°C 4.57mW/°C PD Total Power Dissipation at TC = 25°C 5W Derate Above 25°C 28.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -6.

2N2892 : 5 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N1724 5 80 20 2N1725 5 80 50 2N2658 5 80 40 2N2879 5 80 20 2N2880 5 80 40 2N2890 5 80 30 2N2891 5 80 50 2N2892 5 80 30 2N2893 5 80 50 2N3746 5 80 20 2N3749 5 80 40 2N3752 5 80 100 2N3850 5 80 50 2N3851 5 80 30 2N3996 5 80 40 2N3997 5 80 80 2N3998 5 80 40 2N3999 5 80 80 2N4113 5 80 40 2N4114 5 80 100 2N4116 5 80 100 2N4233A 5 80 25 2N4305 5 80 50 2N4309 5 80 50 2N4897 5 80 40 2N4915 5 80 25 2N5002 5 80 30 2N5004 5 80 70 2N5069 5 80 20 2N5326 5 80 50 2N5336 5 80 30 2N5337 5 80 60 2N5608 5 80 30 2N5610 5 80 70 2N5616 .

2N2893 : 5 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N1724 5 80 20 2N1725 5 80 50 2N2658 5 80 40 2N2879 5 80 20 2N2880 5 80 40 2N2890 5 80 30 2N2891 5 80 50 2N2892 5 80 30 2N2893 5 80 50 2N3746 5 80 20 2N3749 5 80 40 2N3752 5 80 100 2N3850 5 80 50 2N3851 5 80 30 2N3996 5 80 40 2N3997 5 80 80 2N3998 5 80 40 2N3999 5 80 80 2N4113 5 80 40 2N4114 5 80 100 2N4116 5 80 100 2N4233A 5 80 25 2N4305 5 80 50 2N4309 5 80 50 2N4897 5 80 40 2N4915 5 80 25 2N5002 5 80 30 2N5004 5 80 70 2N5069 5 80 20 2N5326 5 80 50 2N5336 5 80 30 2N5337 5 80 60 2N5608 5 80 30 2N5610 5 80 70 2N5616 .

2N2894 : .

2N2894 : .

2N2894 : 2N2894 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) PNP SILICON TRANSISTOR FEATURES • SILICON PNP TRANSISTOR • HIGH SPEED, LOW SATURATION SWITCH 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. APPLICATIONS: GENERAL PURPOSE SWITCHING APPLICATIONS 2.54 (0.100) Nom. 3 2 1 TO18 Underside View PIN 2 – BASE PIN1 – EMITER PIN 3 – COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25°C Derate above 25°C @ TC =25°.

2N2894 : NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCES VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage(VBE = 0) Emitter-Base Voltage (IC = 0) Collector Current @ Tamb = 25° Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° www.DataSheet.net/ Value -12 -12 -12 -4 -200 0.36 1.2 1 -65 to +200 -65 to +200 Unit V V V V mA Watts °C °C @ Tcase100° THERMAL CHARACTER.

2N2894A : 2N2894A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 12 0.2 Units V A - @ 0.5/30m (VCE / IC) 40 800M 0.36 Hz W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@sem.

2N2894ACSM : 2N2894ACSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • SCREENING OPTIONS AVAILABLE A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) • HIGH SPEED, LOW SATURATION SWITCH 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – .

2N2894CSM : 2N2894CSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • SCREENING OPTIONS AVAILABLE A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) • HIGH SPEED, LOW SATURATION SWITCH 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – C.

2N2894DCSM : 2N2894DCSM MECHANICAL DATA Dimensions in mm (inches) DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FEATURES 4.32 ± 0.13 (0.170 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 1.40 ± 0.15 (0.055 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 3 4 5 • SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • SCREENING OPTIONS AVAILABLE • HIGH SPEED, LOW SATURATION SWITCH A 6 0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) A= LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2.

2N2895 : 2N2895 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 65V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 65 1 Units V A - @ 5/5m (VCE / IC) 50 120M 0.5 Hz W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.u.




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